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1

Evaluation of scanning capacitance microscopy sample preparation by focused ion beam

N. Rodriguez, J. Adrian, C. Grosjean, G. Haller, C. Girardeaux, A. Portavoce

Journal:

Microelectronics Reliability

Year:

2006

Language:

english

File:

PDF, 2.24 MB

english, 2006

2

Investigation of a new method for dopant characterization

J. Adrian, N. Rodriguez, F. Essely, G. Haller, C. Grosjean, A. Portavoce, C. Girardeaux

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 747 KB

english, 2007

3

Arsenic and phosphorus codiffusion during silicon microelectronic processes

N. Rodriguez, A. Portavoce, J. Delalleau, C. Grosjean, V. Serradeil, C. Girardeaux

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 699 KB

english, 2010

4

Tungsten diffusion in silicon

De Luca, A., Portavoce, A., Texier, M., Grosjean, C., Burle, N., Oison, V., Pichaud, B.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 5.62 MB

english, 2014

5

Role of Atomic Transport Kinetic on Nano-Film Solid State Growth

Portavoce, Alain, Hoummada, Khalid

Journal:

Diffusion Foundations

Year:

2018

Language:

english

File:

PDF, 3.64 MB

english, 2018

6

Seebeck coefficient in multiphase thin films

Oueldna, Nouredine, Portavoce, Alain, Bertoglio, Maxime, Descoins, Marion, Kammouni, Abdelkhalek, Hoummada, Khalid

Journal:

Materials Letters

Year:

2020

File:

PDF, 1022 KB

2020

7

Thermoelectric power factor of Ge1-Sn thin films

Portavoce, A., Khelidj, H., Oueldna, N., Amhil, S., Bertoglio, M., Mangelinck, D., Essaleh, L., Hoummada, K.

Journal:

Year:

2020

File:

PDF, 1.88 MB

2020

8

Measurement of As diffusivity in Ni2Si thin films

I. Blum, A. Portavoce, D. Mangelinck, R. Daineche, K. Hoummada, J.L. Lábár, V. Carron, J. Bernardini

Journal:

Microelectronic Engineering

Year:

2010

Language:

english

File:

PDF, 598 KB

english, 2010

9

Growth of nanostructures by locally modified surface reactivity

A. Portavoce, M. Kammler, R. Hull, M.C. Reuter, M. Copel, F.M. Ross

Journal:

Materials Science in Semiconductor Processing

Year:

2009

Language:

english

File:

PDF, 337 KB

english, 2009

10

Silver grain boundary diffusion in Pd

Z. Balogh, Z. Erdélyi, D.L. Beke, A. Portavoce, C. Girardeaux, J. Bernardini, A. Rolland

Journal:

Applied Surface Science

Year:

2009

Language:

english

File:

PDF, 233 KB

english, 2009

11

Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures

R. Hull, J. Floro, J. Graham, J. Gray, M. Gherasimova, A. Portavoce, F.M. Ross

Journal:

Materials Science in Semiconductor Processing

Year:

2008

Language:

english

File:

PDF, 556 KB

english, 2008

12

Auger spectroscopy thermodesorption of Sb on Si1−xGex layers grown on Si(1 0 0) substrates

A Portavoce, F Bassani, A Ronda, I Berbezier

Journal:

Surface Science

Year:

2002

Language:

english

File:

PDF, 128 KB

english, 2002

13

Morphological evolution of SiGe layers

I. Berbezier, A. Ronda, F. Volpi, A. Portavoce

Journal:

Surface Science

Year:

2003

Language:

english

File:

PDF, 716 KB

english, 2003

14

Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots

A Portavoce, F Volpi, A Ronda, P Gas, I Berbezier

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 1.26 MB

english, 2000

15

Nucleation and evolution of Si1−xGex islands on Si(001)

F Volpi, A Portavoce, A Ronda, Y Shi, J.M Gay, I Berbezier

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 1.38 MB

english, 2000

16

Sb-surfactant mediated growth of Ge nanostructures

A Portavoce, A Ronda, I Berbezier

Journal:

Materials Science and Engineering: B

Year:

2002

Language:

english

File:

PDF, 429 KB

english, 2002

17

Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation

A. Ronda, I. Berbezier, A. Pascale, A. Portavoce, F. Volpi

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 781 KB

english, 2003

18

Reaction and diffusion at interfaces of micro- and nanostructured materials

P Gas, C Girardeaux, D Mangelinck, A Portavoce

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 273 KB

english, 2003

19

The effect of Sb on the oxidation of Ge quantum dots

Y.S. Lim, F. Bassani, A. Portavoce, A. Ronda, S. Nozaki, I. Berbezier

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 255 KB

english, 2003

20

Effect of Sb on Si/Si and Ge/Si growth process

A. Portavoce, I. Berbezier, A. Ronda

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 270 KB

english, 2003

21

Hole trapping in self-assembled SiGe quantum nanostructures

F. Volpi, A.R. Peaker, I.D. Hawkins, M.P. Halsall, P.B. Kenway, A. Portavoce, A. Ronda, I. Berbezier

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 393 KB

english, 2003

22

Dopant diffusivity and solubility in nickel silicides

Ivan Blum, Alain Portavoce, Khalid Hoummada, Gamra Tellouche, Lee Chow, Dominique Mangelinck, Véronique Carron

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 186 KB

english, 2011

23

Correction of secondary ion mass spectrometry profiles for atom diffusion measurements

A. Portavoce, N. Rodriguez, R. Daineche, C. Grosjean, C. Girardeaux

Journal:

Materials Letters

Year:

2009

Language:

english

File:

PDF, 365 KB

english, 2009

24

Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si

Dominique Mangelinck, Khalid Hoummada, Alain Portavoce, Carine Perrin, Rachid Daineche, Marion Descoins, David J. Larson, Peter H. Clifton

Journal:

Scripta Materialia

Year:

2010

Language:

english

File:

PDF, 289 KB

english, 2010

25

Boron clustering in implanted NiSi

A. Portavoce, I. Blum, D. Mangelinck, K. Hoummada, L. Chow, V. Carron, J.L. Lábár

Journal:

Scripta Materialia

Year:

2011

Language:

english

File:

PDF, 395 KB

english, 2011

26

Arsenic clustering during formation of the transient Ni silicide

K. Hoummada, G. Tellouche, I.D. Blum, A. Portavoce, D. Mangelinck

Journal:

Scripta Materialia

Year:

2012

Language:

english

File:

PDF, 502 KB

english, 2012

27

Manganese diffusion in monocrystalline germanium

A. Portavoce, O. Abbes, Y. Rudzevich, L. Chow, V. Le Thanh, C. Girardeaux

Journal:

Scripta Materialia

Year:

2012

Language:

english

File:

PDF, 309 KB

english, 2012

28

Highly Textured Mn15Si26Film Obtained by High-Temperature Treatment

R. Zirmi, A. Portavoce, R. Delattre, O. Thomas, M.S. Belkaid, M.-C. Record

Journal:

Journal of Electronic Materials

Year:

2012

Language:

english

File:

PDF, 394 KB

english, 2012

29

SiGe nanostructures: new insights into growth processes

Berbezier, I, Ronda, A, Portavoce, A

Journal:

Journal of Physics Condensed Matter

Year:

2002

Language:

english

File:

PDF, 2.31 MB

english, 2002

30

Erratum to: Highly Textured Mn15Si26Film Obtained by High-Temperature Treatment

R. Zirmi, A. Portavoce, M. S. Belkaid, M.-C. Record

Journal:

Journal of Electronic Materials

Year:

2013

File:

PDF, 78 KB

2013

31

heterostructures: Chemical and stress effects

Portavoce, A., Gas, P., Berbezier, I., Ronda, A., Christensen, J. S., Kuznetsov, A. Yu., Svensson, B. G.

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 313 KB

english, 2004

32

Formation and stability of a two-dimensional nickel silicide on Ni(111): An Auger, LEED, STM, and high-resolution photoemission study

Lalmi, B., Girardeaux, C., Portavoce, A., Ottaviani, C., Aufray, B., Bernardini, J.

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 1.78 MB

english, 2012

33

Theoretical investigation of Cottrell atmosphere in silicon

Portavoce, A., Tréglia, G.

Journal:

Acta Materialia

Year:

2014

Language:

english

File:

PDF, 2.94 MB

english, 2014

34

Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation

Portavoce, A., Hull, R., Reuter, M. C., Ross, F. M.

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 853 KB

english, 2007

35

Influence of interfacial reaction upon atomic diffusion studied by in situ Auger electron spectroscopy

Portavoce, A., Hoummada, K., Dahlem, F.

Journal:

Surface Science

Year:

2014

Language:

english

File:

PDF, 1.44 MB

english, 2014

36

About Ge(Mn) diluted magnetic semiconductor

Portavoce, A., Bertaina, S., Abbes, O., Chow, L., Le Thanh, V.

Journal:

Materials Letters

Year:

2014

Language:

english

File:

PDF, 932 KB

english, 2014

37

Direct observation of Ni decorated dislocation loops within As+-implanted silicon and arsenic clustering in Ni silicide contact

Hoummada, Khalid, Tellouche, Gamra, Blum, Ivan, Portavoce, Alain, Descoins, Marion, Mangelinck, Dominique

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 4.03 MB

english, 2013

38

Atom probe tomography for advanced metallization

Mangelinck, D., Panciera, F., Hoummada, K., El Kousseifi, M., Perrin, C., Descoins, M., Portavoce, A.

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 4.34 MB

english, 2014

39

Silicide formation during reaction between Ni ultra-thin films and Si(001) substrates

Fouet, J., Texier, M., Richard, M.-I., Portavoce, A., Mangelinck, D., Guichet, C., Boudet, N., Thomas, O.

Journal:

Materials Letters

Year:

2014

Language:

english

File:

PDF, 2.59 MB

english, 2014

40

Progress in the understanding of Ni silicide formation for advanced MOS structures

Mangelinck, D., Hoummada, K., Panciera, F., El Kousseifi, M., Blum, I., Descoins, M., Bertoglio, M., Portavoce, A., Perrin, C., Putero, M.

Journal:

physica status solidi (a)

Year:

2014

Language:

english

File:

PDF, 836 KB

english, 2014

41

Kinetics of growth and consumption of Ni rich phases

Tellouche-Derafa, G., Hoummada, K., Derafa, A., Blum, I., Portavoce, A., Mangelinck, D.

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 1.16 MB

english, 2014

42

Physical origin of thickness-controlled sequential phase formation during reactive diffusion: Atomistic modeling

Portavoce, A., Tréglia, G.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 929 KB

english, 2010

43

Subnanometric Si film reactive diffusion on Ni

Portavoce, A., Lalmi, B., Tréglia, G., Girardeaux, C., Mangelinck, D., Aufray, B., Bernardini, J.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 460 KB

english, 2009

44

Kinetic of Formation of Ni and Pd Silicides: Determination of Interfacial Mobility and Interdiffusion Coefficient by In Situ Techniques

Hoummada, Khalid, Mangelinck, Dominique, Portavoce, Alain

Journal:

Solid State Phenomena

Year:

2011

Language:

english

File:

PDF, 329 KB

english, 2011

45

Sequential Phase Formation during Reactive Diffusion of a Nanometric-Thick Mn Film on Ge(111)

Abbes, Omar, Xu, Feng, Portavoce, Alain, Hoummada, Khalid, Le Thanh, Vinh, Girardeaux, Christophe

Journal:

Solid State Phenomena

Year:

2011

Language:

english

File:

PDF, 925 KB

english, 2011

46

Numerical Simulation Support for Diffusion Coefficient Measurements in Polycrystalline Thin Films

Portavoce, Alain, Blum, Ivan, Chow, Lee, Bernardini, Jean, Mangelinck, Dominique

Journal:

Defect and Diffusion Forum

Year:

2011

Language:

english

File:

PDF, 858 KB

english, 2011

47

Reactive Diffusion of Thin Si Deposits into Ni (111)

Lalmi, B., Girardeaux, C., Portavoce, Alain, Aufray, Bernard, Bernardini, Jean

Journal:

Defect and Diffusion Forum

Year:

2012

Language:

english

File:

PDF, 438 KB

english, 2012

48

Theoretical and Experimental Evidences of Sequential Phase Formation during Sub-Nanometric-Thick Film Reactive Diffusion

Portavoce, Alain, Tréglia, Guy, Lalmi, Boubekeur, Girardeaux, Christophe, Mangelinck, Dominique, Aufray, Bernard, Bernardini, Jean

Journal:

Solid State Phenomena

Year:

2011

Language:

english

File:

PDF, 512 KB

english, 2011

49

Transition from anomalous kinetics toward Fickian diffusion for Si dissolution into amorphous Ge

Balogh, Zoltán, Erdélyi, Zoltán, Beke, Dezső L., Langer, Gábor A., Csik, Attila, Boyen, Hans-Gerd, Wiedwald, Ulf, Ziemann, Paul, Portavoce, Alain, Girardeaux, Christophe

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 443 KB

english, 2008

50

B diffusion in implanted Ni[sub 2]Si and NiSi layers

I. Blum, A. Portavoce, L. Chow, D. Mangelinck, K. Hoummada, G. Tellouche, V. Carron

Year:

2010

Language:

english

File:

PDF, 500 KB

english, 2010

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